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[kindle] Fundamental Aspects of Silicon Oxidation

Fundamental Aspects of Silicon Oxidation书籍详细信息

ISBN：9783540416821
作者：Chabal, Yves Jean; Chabal, Y. J.;
出版社：暂无出版社
出版时间：暂无出版时间
页数：274
价格：$ 168.37
纸张：暂无纸张
装帧：暂无装帧
开本：暂无开本
语言：暂无语言
适合人群：Scientists, Engineers, Materials Researchers, Semiconductor Industry Professionals, College Students in Materials Science and Engineering, Chemistry, and Physics
TAG：Engineering / Materials Science / Physics / Chemistry / Silicon Oxidation / Semiconductor Technology
豆瓣评分：暂无豆瓣评分
更新时间：2025-05-07 14:47:30

内容简介：

This book brings forth fundamental aspects of silicon oxidation that are key to understanding the nature of ultra-thin oxides used in microelectronics. From the wet chemical pre-cleans prior to oxidation to oxygen diffusion in oxides, the chemical, structural and kinetic elements of oxidation are presented in a tutorial fashion at both an experimental and theoretical level. Experimental results are based on powerful techniques such as photon/electron spectroscopy, ion scattering and electron/tunneling microscopy. The theories, based on first principles, focus on atomic scale processes related to silicon oxidation. In contrast to previous books dealing with the structural and electronic properties of silicon oxide, this book is solely devoted to the formation and evolution of silicon oxide, including its nitridation.

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