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沃新书屋 -
Ionizing Radiation Effects in Metal-oxide Semiconductor Devices and Circuits -
作者：Ma, T. P.; Dressendor; Ma
Ma, T. P.; Dressendor; Ma
人物简介：
Ionizing Radiation Effects in Metal-oxide Semiconductor Devices and Circuits书籍相关信息
- ISBN：9780471848936
- 作者：Ma, T. P.; Dressendor; Ma
- 出版社：暂无出版社
- 出版时间：1989-4
- 页数：608
- 价格：暂无价格
- 纸张：暂无纸张
- 装帧：暂无装帧
- 开本：暂无开本
- 语言：暂无语言
- 适合人群：Electronics Engineers, Materials Scientists, Reliability Engineers, Defense Industry Professionals, Nuclear Engineers, Semiconductor Researchers, Graduate Students in Engineering and Physics
- TAG：Materials Science / Circuit Design / Semiconductor Devices / Reliability Engineering / Device Physics / Ionizing Radiation / Electronic Warfare / Defense Technology
- 豆瓣评分：暂无豆瓣评分
- 更新时间：2025-05-17 00:25:50
内容简介：
The first comprehensive overview describing the effects of ionizing radiation on MOS devices, as well as how to design, fabricate, and test integrated circuits intended for use in a radiation environment. Also addresses process-induced radiation effects in the fabrication of high-density circuits. Reviews the history of radiation-hard technology, providing background information for those new to the field. Includes a comprehensive review of the literature and an annotated listing of research activities in radiation-hardness research.
